| PART |
Description |
Maker |
| 3DD101B |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
Inchange Semiconductor ...
|
| 3DD102A |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
|
Inchange Semiconductor ...
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SA505 |
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
|
Inchange Semiconductor ...
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SB1589 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| 2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
